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5 article(s) from Philipp, Patrick

Ultralow-energy amorphization of contaminated silicon samples investigated by molecular dynamics

Grégoire R. N. Defoort-Levkov,
Alan Bahm and
Patrick Philipp

Beilstein J. Nanotechnol. 2023, 14, 834–849, doi:10.3762/bjnano.14.68

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Figure 1: Representations of the contaminated sample under argon irradiation for an incidence angle of 45° an...

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Figure 2: Evolution of the amorphization coefficient as funciton of the energy for (a) 0°, (b) 30°, (c) 45°, ...

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Figure 3: Evolution of the thickness of (a) the amorphous region and (b) the partially amorphous region for e...

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Figure 4: Evolution of the RDF for each slab at collisions under 30° and 75° incidence from crystalline to am...

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Figure 5: Implantation depth of argon atoms for incidence angles of (a) 0°, (b) 30°, (c) 45°, (d) 60°, (e) 75...

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Figure 6: Total implantation counts of (a) argon atoms, (b) oxygen atoms, and (c) hydrogen atoms in the sampl...

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Figure 7: Mean implantation depth of (a) argon atoms, (b) oxygen atoms, and (c) hydrogen atoms in the sample ...

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Figure 8: Partial sputtering yields for (a) silicon, (b) oxygen, and (c) hydrogen with respect to the angle f...

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Figure 9: Comparison between experimental data and simulation data found in the literature. Full symbols repr...

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Figure 10: Sputtering yields for (a) MD simulations of pristine and contaminated silicon and (b) SDTrimSP simu...

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Published 01 Aug 2023

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Influence of water contamination on the sputtering of silicon with low-energy argon ions investigated by molecular dynamics simulations

Grégoire R. N. Defoort-Levkov,
Alan Bahm and
Patrick Philipp

Beilstein J. Nanotechnol. 2022, 13, 986–1003, doi:10.3762/bjnano.13.86

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Figure 1: Fit of the DFT data for the argon–silicon potential in (a) the 1–5 Å region, with the potential wel...

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Figure 2: Visualisations of the samples during equilibration steps: (a) represents the silicon sample after S...

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Figure 3: Representations of (a) clean and (b) contaminated samples. The silicon atoms are shown in yellow, o...

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Figure 4: Bond length distributions for the pristine sample (blue) and the contaminated sample (pink) regardl...

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Figure 5: Evolution of bond lengths in the contaminated sample under bombardment. (a) The first graph shows b...

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Figure 6: Evolution of the clean (a, b, c) and contaminated (d, e, f) samples under ion irradiation, before t...

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Figure 7: Representation of each region in the sample, the amorphous region is the one with the highest disor...

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Figure 8: Evolution of the μ coefficient with respect to the angle for (a) pristine and (b) contaminated samp...

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Figure 9: Radial distribution function for (a) clean and (b) contaminated samples for all previously determin...

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Figure 10: Comparison of the radial distribution function for both samples in the amorphous layer. The same cu...

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Figure 11: Comparison of the radial distribution function in the amorphous slab of the contaminated sample wit...

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Figure 12: Comparison between samples after irradiation with an incident beam at 100 eV and 85° for (a) the pr...

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Figure 13: Distribution of implanted contaminants, (a) oxygen, (b) hydrogen and (c) argon, with respect to the...

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Figure 14: Number of argon atoms retained in the sample, regardless of the depth of implantation, with respect...

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Figure 15: Evolution of the Si–O (a) and Si–H (b) products with respect to the fluence and the angle.

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Figure 16: Sputtering yields of pristine and contaminated samples with respect to the incidence angle. For the...

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Figure 17: Fraction of the contaminants sputtered after 500 impacts with respect to the angle. The values are ...

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Figure 18: Sputtering yields for (a) silicon-related and (b) oxygen-related clusters.

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Figure 19: Graph showing the probability to dissociate at least one water cluster per impact, with respect to ...

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Published 21 Sep 2022

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Defect formation in multiwalled carbon nanotubes under low-energy He and Ne ion irradiation

Santhana Eswara,
Jean-Nicolas Audinot,
Brahime El Adib,
Maël Guennou,
Tom Wirtz and
Patrick Philipp

Beilstein J. Nanotechnol. 2018, 9, 1951–1963, doi:10.3762/bjnano.9.186

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Figure 1: Raman spectra of multiwalled carbon nanotubes after irradiation with different fluences of a) 25 ke...

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Figure 2: a) Ratio of intensities of D to G band as a function of fluence for 25 keV He and Ne irradiation, a...

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Figure 3: TEM images and Raman spectra after: (A–C) 25 keV He⁺ irradiation with a fluence of 10¹⁸ ions/cm² (D...

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Figure 4: Nuclear and electronic energy loss as a function of sample thickness for a) He⁺ and b) Ne⁺ irradiat...

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Figure 5: Sputter yield a) at the top, and b) at the bottom of the sample as a function of fluence for Ne irr...

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Figure 6: Backscatter yield as a function of gold thickness for He and Ne irradiation of a 30 nm carbon film ...

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Figure 7: Displacements into the carbon layer normalised to incident ion as a function of gold thickness for ...

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Figure 8: Schematic illustration of the sample configuration and the sequence of techniques used in this inve...

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Published 09 Jul 2018

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Numerical investigation of depth profiling capabilities of helium and neon ions in ion microscopy

Patrick Philipp,
Lukasz Rzeznik and
Tom Wirtz

Beilstein J. Nanotechnol. 2016, 7, 1749–1760, doi:10.3762/bjnano.7.168

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Figure 1: Initial sample composition for a) sample #1, b) sample #2, and c) sample #3. All samples have inter...

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Figure 2: Sample composition as a function of depth and primary ion fluence for 1 keV He⁺ irradiation of samp...

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Figure 3: Sample composition as a function of depth and primary ion fluence for 1 keV He⁺ irradiation of samp...

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Figure 4: Sample composition as a function of depth and primary ion fluence for 20 keV Ne⁺ irradiation of sam...

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Figure 5: Sample composition as a function of depth and primary ion fluence for 20 keV Ar⁺ irradiation of sam...

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Figure 6: Simulated depth profiles for a) 20 keV Ne⁺ irradiation of sample #1 with 10 nm and 20 nm inter-laye...

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Figure 7: Sample composition as a function of depth and primary ion fluence for 1 keV Ne⁺ irradiation of samp...

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Figure 8: Sample composition as a function of depth and primary ion fluence for 1 keV Ne⁺ irradiation of samp...

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Figure 9: Simulated depth profiles for a) 1 keV Ne⁺ irradiation of sample #1, b) 1 keV Ne⁺ irradiation of sam...

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Figure 10: Simulated depth profiles for a) 1 keV Ne⁺ irradiation of sample #2, b) 1 keV Ar⁺ irradiation of sam...

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Published 17 Nov 2016

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Experimental and simulation-based investigation of He, Ne and Ar irradiation of polymers for ion microscopy

Lukasz Rzeznik,
Yves Fleming,
Tom Wirtz and
Patrick Philipp

Beilstein J. Nanotechnol. 2016, 7, 1113–1128, doi:10.3762/bjnano.7.104

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Figure 1: Changing topography of PMMA bombarded by 5.5 keV Ne⁺ as a function of fluence (FOV: 1 × 1 µm²).

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Figure 2: RMS roughness changing with primary He⁺ and Ne⁺ fluence when bombarding (a) PMMA and (b) PS.

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Figure 3: Displacement of He, Ne and Ar from their initial positions in HD-PMMA sample at 300 K. No periodic ...

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Figure 4: Mean square displacement (MSD) of helium, neon and argon at 300 K in a) HD-PE, b) HD-PS, c) HD-PMMA...

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Figure 5: Implantation profiles in polyethylene obtained by SD_TRIM_SP for diffusion coefficient ranging from...

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Figure 6: Surface sputtering vs swelling for different diffusion coefficients for helium irradiation of PE.

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Figure 7: Evolution of sputter yields with fluence for a) helium, b) neon, and c) argon bombardment of PE at ...

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Figure 8: Evolution of sputter yields with fluence for a) helium, b) neon, and c) argon bombardment of PTFE a...

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Figure 9: Evolution of sputter yields with fluence for a) helium, b) neon, and c) argon bombardment of PMMA a...

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Figure 10: Partial sputter yields for the different chemical elements sputtered from a) PTFE, b) PE, c) PMMA, ...

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Figure 11: Surface composition as a function of impact energy for helium, neon and argon bombardment of a) F a...

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Figure 12: Concentration profiles of F and C at a fluence of 10¹⁸ ions/cm² for He, Ne and Ar bombardment of PT...

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Figure 13: Concentration profiles of H and C at a fluence of 10¹⁸ ions/cm² for He, Ne and Ar bombardment of PE...

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Published 02 Aug 2016

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